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| PHOTOMULTIPLIER TUBES R5900U FEATURES GHigh Speed Response GWide Dynamic Range GCompact GENERAL Parameter Spectral Response Peak Wavelength Photocathode Window Material Dynode Structure Number of Stages Material Minimum Effective Area Description/Value 300 to 650 420 Bialkali 18 x 18 Borosilicate glass Metal channel dynode 10 Approx. 25.5 E678-32B (sold separately) -30 to +50 -30 to +50 Unit nm nm -- mm -- -- -- g -- C C Weight Suitable Socket Operating Ambient Temperature Storage Temperature MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage Average Anode Current Parameter Between Anode and Cathode Value 900 0.1 Unit V mA CHARACTERISTICS (at 25 C) Cathode Sensitivity Parameter Luminous (2856 K) Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Min. 60 7 30 5.0 x 105 -- -- -- -- Typ. 70 8 140 2.0 x 106 2 1.5 0.26 30 Max. -- -- -- -- 20 -- -- -- Unit A/lm -- A/lm -- nA ns ns mA Anode Sensitivity Gain Anode Dark Current (after 30 min storage in darkness) Anode Pulse Rise Time Time Response Transit Time Spread (FWHM) Pulse Linearity 2 % deviation NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 1.5 1.5 1.5 1 1 1 1 1 1 1 1 Supply Voltage: 800 Vdc, K: Cathode, Dy: Dynode, P: Anode Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 2003 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R5900U Figure 1: Typical Spectral Response TPMHB0266EA Figure 2: Typical Gain and Anode Dark Current 108 TPMHB0265ED 100 CATHODE RADIANT SENSITIVITY 10 10-4 GAIN CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 107 10-5 QUANTUM EFFICIENCY 105 10-7 1 104 10-8 103 10-9 0.1 102 10-10 101 ANODE DARK CURRENT 10-11 0.01 100 200 300 400 500 600 700 800 900 100 400 600 800 10-12 1000 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 3: Typical Time Response TPMHB0263ED Figure 4: Typical T.T.S. Characteristic TPMHB0264EB 104 SUPPLY VOLTAGE=-800 V FWHM=256 ps FWTM=527 ps RELATIVE COUNTS 103 (20 mV/div.) 102 101 SUPPLY VOLTAGE=-800 V RISE TIME=1532 ps FALL TIME=2691 ps WIDTH=3163 ps RL=50 100 TIME (2 ns/div.) TIME (0.5 ns/div.) ANODE DARK CURRENT (A) 106 10-6 GAIN Figure 5: Effect of Magnetic Fields on Anode Output 110 TPMHB0261ED Ebb=-800 V Z 100 Y-AXIS + - - Y + + RELATIVE OUTPUT (%) X 80 - 60 Guide Corner (at Rear Side) X-AXIS 40 20 Z-AXIS 0 -80 -60 -40 -20 0 20 40 60 80 MAGNETIC FLUX DENSITY (mT) Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) 22.0 0.5 0.6 0.4 4.4 0.7 2.54 PITCH IC IC P IC IC IC IC 12.0 0.5 123456789 32 10 11 31 30 12 GUIDE 29 13 CORNER 28 14 15 27 16 26 25 24 23 22 21 20 19 18 17 30.0 0.5 25.7 0.5 18 MIN. IC IC IC IC IC IC IC 4 MAX. PHOTOCATHODE EFFECTIVE AREA INSULATION COVER Side View Bottom View 29- 0.45 CUT (K) Dy10 Dy9 Dy8 Dy7 Dy6 Dy5 IC (Dy10) CUT (K) K : Photocathode Dy : Dynode P : Anode CUT : Short Pin IC : Internal Connection (Don't Use) Basing Diagram Top View TPMHA0278EI PHOTOMULTIPLIER TUBE R5900U [ACCESSORIES] (Unit: mm) G Scoket E678-32B 22.86 20.32 2.54 4.45 2.92 SOLD SEPARATELY 22.86 20.32 12.7 0.51 12.7 1.57 MATERIAL: Glass Epoxy TACCA0094ED G D Type Scoket Assembly E5996 30.0 0.5 SOLD SEPARATELY PMT SOCKET PIN No. 30 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) PIN No.1 30.0 0.5 P R14 DY10 DY9 24 R11 R10 R9 R8 C3 C2 C1 R13 23 15.0 0.5 HOUSING (INSULATOR) R12 DY8 DY7 DY6 DY5 22 21 R7 20 R6 19 R1 to R3 : 330 k R4 to R11 : 220 k R12 to R14 : 51 R15 : 1 M C1 to C3 : 10 nF 450 R5 DY4 DY3 DY2 K DY1 7 R4 6 R3 5 R2 4 R15 1 R1 -HV : RG-174U (RED) POWER SUPPLY GND TACCA0234EC WARNING ~ High Voltage ~ The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments. * PATENT: USA Pat. No. 5410211 PATENT PENDING: JAPAN 11, USA 1, EUROPE 2 WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMH1109E10 MAR. 2003 IP Printed in Japan (500) |
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